The characteristics of wet gate oxide device and nitride oxide (NO) device

摘要

In this paper we fabricated and tested the 0.26 /spl mu/m NMOSFET with wet gate oxide and nitride oxide gate to compare that the characteristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC (stress induced leakage current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device are better than wet gate oxide device, especially hot carrier lifetime (nitride oxide gate device has a lifetime of 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown and charge trapping.