A new nonlinear model extraction methodology for GaN HEMTs subject to trapping effects

摘要

This paper presents a new nonlinear equivalent circuit model extraction methodology of a GaN HEMT subject to trapping effects. Contrary to previous approaches that rely on computationally involved behavioral modeling techniques and/or nonlinear optimization processes, which lack physical insight, this technique uses the physics of the trapping mechanisms to come up with an extraction procedure that is simple, direct and systematic. Based on a recently advanced double-pulse I/V measurement technique for obtaining iso-dynamic device states, we first measure a set of pulsed dc I/V curves from which the trap dependent equivalent circuit model is then extracted. The proposed model extraction technique is validated through two-tone RF measurements, in which the GaN HEMT trapping effects are clearly exposed.