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机译:具有自热和俘获效应的GaN HEMT经验大信号模型参数提取方法
Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China|Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 611731, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China;
Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China;
GaN HEMTs; large-signal model; parameter extraction;
机译:GaN HEMTS的物理大信号模型,包括自热和陷阱相关的色散
机译:AlGaN / GaN功率HEMT的电热模型,包括俘获效应以改善高VSWR上的大信号仿真结果
机译:AlGaN / GaN HEMT包括自热和环境温度影响的经验大信号建模的电热模型
机译:改进的用于大功率GaN HEMT的经验大信号模型,包括自热和电荷陷阱效应
机译:GaN HEMT中的自热效应研究。
机译:关于碳掺杂GaN中供体/受体补偿比的建模在横向GaN功率Hemts中的单一再现击穿电压和电流塌陷
机译:电场和自加热效果对GaN Hemts铁陷阱发射时间
机译:GaN-HEmT的先进大信号建模。