Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

摘要

For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter- and submillimeter-wave monolithic integrated circuits (MMICs and S-MMICs) and modules. The monolithic integrated circuits are realized using the advanced metamorphic high electron mobility transistor (mHEMT) technology in the InGaAs/InAlAs material system on 4” GaAs substrates. This paper presents a 600 GHz amplifier S-MMIC and a chip set of MMICs developed for a 300 GHz radar.