Photoelectrochemical cell performance of electrodeposited iron doped zinc selenide thin film

摘要

In the present investigation, we are discussing the results on photoelectrochemical cell performance of iron doped zinc selenide thin films by Electrodeposition. Thin films were deposited by Galvanostatically as well as potentiostatically at an aqueous solution onto stainless steel substrate as well as ITO (indium tin oxide). Precursor of zinc selenide is zinc sulphate (ZnSO4), selenium dioxide (SeO2) and ferrous sulphate (FeSO4). The deposited films were characterized by different physico-chemical characterization such as, for structural study X-ray diffraction study was used, Scanning electron microscopy (SEM) for surface morphology, optical absorption study made by UV spectrometer and it showed that the semiconductor nature of the electrodeposited zinc selenide thin films with band gap 2.6 eV and PEC performance shows that Isc is 360 mA and Voc is 135 mV.