Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures

摘要

This paper describes electrical characteristics of lateral tunnel diodes fabricated on an AlGaN/GaN heterostructure. Our lateral tunnel diode consists of a recessed Schottky source, in contact with the two-dimensional electron gas, and a non-recessed ohmic drain. We have fabricated three different device structures to study the current path. By analyzing conduction current components, we have achieved good tunnel junctions having lateral Schottky electrodes directly contacting to the GaN channel layer with 2DEG.