As CMOS technology continues to scale down, one of the most critical factors that affect the device performance is the various defects which are introduced in the process. The poly defect formation was found in un-doped gate poly film. In this paper, the formation mechanism of poly defect was discussed along with methods to reduce the poly defect. The result shows the condition of low temperature and high N2 gas flow can be used to control the deposition rate and help generate fine grain poly silicon and thus smooth surface. In addition, low temperature and high N2 gas flow can eliminate the bump defect effectively.
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