Optical critical dimension measurement for 16/14 nm FinFET

摘要

Reducing leakage current and improving device's stability become important challenge for CMOS develop under the technology node of 22nm. FinFET has been attractive as the most potential device structure under 22nm. Unique FinFET device structure has the absolute advantage in restraining short channel effect. This paper presents an optical metrology technique OCD for FinFET dimension measurement. This measurement results by OCD, demonstrate the capability of the OCD as an important metrology technique for IC process control.