Analysis of short channel effects for 14nm and beyond Si-bulk FinFET

摘要

As Complementary Metal Oxide Semiconductor (CMOS) Integrated Circuit (IC) technology scales down to 14nm and sub-14nm node according to Moore's Law, Si-bulk FinFET has been demonstrated as one of the most promising device architectures due to higher transistor performance, larger density and lower leakage. However, as the gate length scales down continuously, short channel effect, mainly Vth roll-up/off, becomes a serious problem that needs to be solved urgently. In this paper, two mechanis ms, mainly work function modulation induced by Fluorine diffusion from tungsten to metal gate layer and high phosphorus in-situ doped source/drain epitaxy, are studied for N-type FinFET Vth roll up/off in detail, which is significant and meaningful in the development on 14nm and beyond FinFETs.