Investigation of Short Channel Effects (SCEs) and Analog/RF Figure of Merits (FOMs) of Dual-Material Bottom-Spacer Ground-Plane (DMBSGP) FinFET

摘要

FinFETs are popular and forefront runner in integrated circuits (ICs) technology due to exceptional scalability and suppressed short channel effects (SCEs). The bottom spacer (BP) concept is adopted in FinFET to achieve ameliorated short-channel, reduced self heating issues and to solve width quantization effect. The dual-material-gate (DMG) concept provides novel features like threshold voltage roll-up, transconductance enhancement and suppression of SCEs by work function engineering. Further, the ground-plane (GP) concept is also introduced to minimize the interaction between source and drain region which results in suppressed drain induced barrier lowering (DIBL). This paper investigates the systematic analysis of novel DMBSGP FinFET. The electrical performance parameters are extracted for different bottom spacer height (BSH) and workfunction differences ( increment W). The analog/RF figure of merits (FOMs) such as transconductance (g(m)), output conductance (g(d)), transconductance generation factor (g(m)/I-D), early voltage (V-EA), intrinsic gain (A(V)), cut-off frequency (f(T)), transconductance frequency product (TFP), gain frequency product (GFP) and gain transconductance frequency product (GTFP) are examined for different BSH of DMBSGP FinFET using 3-D ATLAS device simulator.