Effect of TT-LYK on Copper CMP with Ru/Ta as barrier/liner

摘要

This paper investigates the effect of TT- LYK as an inhibitor on the copper chemical mechanical planarization with Ru/Ta as barrier layer. The results show that the TT-LYK can obviously reduce the dissolution rate of Cu. It can effectively passivate the copper surface. The results also show that the passivation capability was decreased as pH increase from 8 to 10. The effect of TT- LYK on dishing and erosion with different pattern density was also studied. However, the addition of TT-LYK is almost unchanged the removal rate of Ru. The rate of Ru is almost zero compared to the rate of copper. The passivation mechanism of TT-LYK on Cu CMP was revealed by electrochemistry.