Rectangular suspended single crystal Si nanowire with (001) planes and direction developed via TMAH wet chemical etching

摘要

In this study, a kind of rectangular suspended single crystal Si nanowire with (001) planes and along <001> direction is developed via a CMOS-compatible top-down scheme. In this scheme, the nanowires are formed by anisotropic etching of TMAH on different silicon crystallography orientations. By designing the initial orientations of hard mask patterns, the rectangular suspended silicon nanowires can be successfully fabricated without any sacrificial epitaxial layers. Due to the damage-free process and the high mobility on (001) planes, this scheme will provide a high-quality channel for the future gate-alI-around silicon transistor technology.