Optimization of 4H-SiC power Schottky Barrier Diodes

摘要

Silicon Carbide (SiC) is among the most promising semiconductor for high-voltage and high-temperature power electronics switching applications. A careful analysis of the current state-of-the-art commercial 4H-SiC power Schottky Barrier Diodes (SBDs) shows that these devices are operated well below their true avalanche breakdown potential. It is found that the breakdown voltage ratings of these devices are smaller nearly by a factor of 2 due to increased leakage current caused by drift-region punch-through. A simple analysis is presented to determine the de-rating factor of SiC power SBDs using the information provided in the manufacturer's data sheets. It is recommended that further improvement in material growth and manufacturing technologies offer significant promise in developing robust, low-cost, and high-performance SiC power switching devices.