SCHOTTKY BARRIER DIODE, METHOD OF MANUFACTURING SCHOTTKY BARRIER DIODE, POWER TRANSMISSION SYSTEM, AND WIRELESS CONNECTION CONNECTOR FOR POWER SUPPLY

摘要

PROBLEM TO BE SOLVED: To provide a Schottky barrier diode capable of achieving a high performance Schottky barrier diode having a sufficiently low ON voltage, e.g., about 1/2 that of a conventional GaN-based Schottky barrier diode using a Ni/Au electrode as the anode electrode, and ensuring an equivalent low ON resistance and high breakdown voltage, while furthermore ensuring uniform plating when plating a resistance reduction metal such as Au, and the Schottky contact characteristics do not degrade even if holes, such as pinholes, are formed in the TiN layer.;SOLUTION: A Schottky barrier diode has an active layer 13 composed of an n-type GaN-based semiconductor and an anode electrode 14 provided in Schottky contact therewith. The anode electrode 14 consists of a TiN layer 14a provided in contact with the active layer 13, an adhesion layer 14b on the TiN layer 14a composed of a metal capable of Schottky contact with the active layer 13, and resistance reduction metal layers 14c, 14d on the adhesion layer 14b.;COPYRIGHT: (C)2015,JPO&INPIT