Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process

摘要

Strained Ge p-channel FinFETs on Strain Relaxed SiGe are reported for the first time, demonstrating peak transconductance gm_SAT of 1.3mS/μm at V_DS=-0.5V and good short channel control down to 60nm gate length. Optimization of P-doping in the SiGe, optimized Si cap passivation thickness on the Ge, and improved gate wrap of the channel all improve device characteristics. The Ge FinFETs presented in this work outperform published relaxed Ge FinFET devices for the gm_SAT/SS_SAT benchmarking metric.