机译:高晶体质量应变Si0.5为0.5层,厚度高达50nm的三层SiGe菌株松弛缓冲液
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Beijing Informat Sci &
Technol Univ Sch Appl Sci Beijing 100192 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc Ctr Beijing 100029 Peoples R China;
SiGe; Strain relaxed buffer; Threading dislocation; Epitaxy; Strain;
机译:高晶体质量应变Si0.5为0.5层,厚度高达50nm的三层SiGe菌株松弛缓冲液
机译:在具有70-85%Ge的SiGe应变松弛缓冲液上生长的光滑高质量外延应变Ge
机译:自热和SiGe应变缓和缓冲层厚度对应变Si nMOSFET的模拟性能的影响
机译:在新型三层应变松弛缓冲液上生长的Si
机译:GaAs(001)上生长的高质量100 nm厚InSb膜具有InxAl1-xSb连续渐变缓冲层的基板
机译:自热和SiGe应变缓和缓冲层厚度对应变Si nMOSFET的模拟性能的影响