CMOS process compatible integrated diodes using self-assembledsilicon-nanostructure cathodes have been fabricated and characterized at atmospheric pressure. The silicon nanostructures are atomically sharp and about 10 nm high, self-assembled on a silicon substrate by electron beam annealing (EBA). The electrical conduction characteristics of the devices show Fowler-Nordheim field emission at high fields. A field enhancement factor, β, of about 5×105 cm−1 and silicon effective work function, Фeff, of about 0.21 eV are reported for the devices.
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