CMOS process compatible integrated diodes using self-assembledsilicon-nanostructure cathodes have been fabricated and characterized at atmospheric pressure. The silicon nanostructures are atomically sharp and about 10 nm high, self-assembled on a silicon substrate by electron beam annealing (EBA). The electrical conduction characteristics of the devices show Fowler-Nordheim field emission at high fields. A field enhancement factor, β, of about 5×105 cm−1 and silicon effective work function, Фeff, of about 0.21 eV are reported for the devices.
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机译：已经制造了使用自组装硅纳米结构阴极的CMOS工艺兼容集成二极管，并在大气压下进行了表征。硅纳米结构原子清晰，高约10 nm，通过电子束退火（EBA）自组装在硅基板上。器件的导电特性显示高场下的Fowler-Nordheim场发射。大约5×10 5 cm -1 的场增强因子β和大约0.21 eV的硅有效功函数Ф eff 报告有关设备的信息。
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