Research on the h-BN Films for High Frequency SAW Devices

摘要

Hexagonal Boron Nitride (h-BN) films For high-frequency SAW devices were deposited on Ti/Al/Si(111) wafers by RF magnetron sputtering. The structure of h-BN films was investigated by fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) spectra. And the surface morphology and piezoelectric properties of h-BN film was characterized by atomic force microscopy (AFM). And the characterization results show that when the RF power is 300w and other experimental parameters were fixed, h-BN films was in high purity and the c-axis oriented, h-BN films was in high purity and the c-axis oriented, and the particles of which are uniform and compact, roughness is 2.63nm with piezoelectric and piezoelectric response even, meet the requirements of high sound propagation speed and excellent piezoelectric for high frequency SAW devices. The studies of piezoelectric test of thin films have shown that PFM test method of atomic force microscopy was suitable for characterization of piezoelectric and properties of the piezoelectric response distribution of nano-structure semiconductor thin film.