首页> 外国专利> HIGH FREQUENCY ELECTROMAGNETIC FIELD COUPLING TYPE THIN FILM LAMINATED ELECTRODE, HIGH FREQUENCY TRANSMISSION LINE, HIGH FREQUENCY RESONATOR, HIGH FREQUENCY FILTER, HIGH FREQUENCY DEVICE, AND METHOD FOR SETTING UP FILM THICKNESS OF THE ELECTRODE

HIGH FREQUENCY ELECTROMAGNETIC FIELD COUPLING TYPE THIN FILM LAMINATED ELECTRODE, HIGH FREQUENCY TRANSMISSION LINE, HIGH FREQUENCY RESONATOR, HIGH FREQUENCY FILTER, HIGH FREQUENCY DEVICE, AND METHOD FOR SETTING UP FILM THICKNESS OF THE ELECTRODE

机译:高频电磁场耦合型薄膜薄膜电极,高频传输线,高频谐振器,高频滤波器,高频装置以及设置膜厚的方法

摘要

PURPOSE: To reduce the loss of a conductor by simple structure by forming an electromagnetic field coupling type thin film laminated transmission line using a high frequency electromagnetic field coupling type thin film laminated electrode on which thin film conductors and thin film dielectrics are alternately laminated. ;CONSTITUTION: A band-like thin film conductor 5 having longitudinal length of g/2 (g is intra-conduit wavelength) is formed on a dielectric substrate 10. A main transmission line LN 10 is constituted of conductors 5, 11 and the substrate 10 held between the conductors 5, 11. Then a thin film dielectric 30-4, a thin film conductor 4, a thin film dielectric 30-3, a thin film conductor 3, a thin film dielectric 30-2, a thin trim conductor 2, a thin film dielectric 30-1, and a thin film conductor 1 are successively laminated on the conductor 5. Then an input terminal conductor 12 and an output terminal conductor 13 are formed on the substrate 10 with respective gaps g1, g2 from the conductor 5 so as to be electromagnetically mutually coupled.;COPYRIGHT: (C)1996,JPO
机译:目的:通过使用高频电磁场耦合型薄膜层压电极形成电磁场耦合型薄膜层压传输线,在该结构上交替层压薄膜导体和薄膜电介质,以通过简单的结构减少导体的损耗。 ;构成:在电介质基片10上形成纵向长度为g / 2(g为导管内波长)的带状薄膜导体5。主传输线LN 10由导体5、11和基片构成。保持在导体5、11之间的导体10。然后是薄膜电介质30-4,薄膜导体4,薄膜电介质30-3,薄膜导体3,薄膜电介质30-2,薄修整导体。如图2所示,将薄膜电介质30-1和薄膜导体1依次层叠在导体5上。然后,在基板10上形成与基板10之间具有间隙g1,g2的输入端子导体12和输出端子导体13。导体5相互电磁耦合。版权所有:(C)1996,日本特许厅

著录项

  • 公开/公告号JPH08167804A

    专利类型

  • 公开/公告日1996-06-25

    原文格式PDF

  • 申请/专利权人 MURATA MFG CO LTD;

    申请/专利号JP19940310900

  • 申请日1994-12-14

  • 分类号H01P3/18;H01P1/20;H01P1/203;H01P1/208;H01P3/08;H01P7/08;H01P7/10;

  • 国家 JP

  • 入库时间 2022-08-22 04:01:23

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