首页> 外文会议>2011 3rd IEEE International Memory Workshop >Study of Pass-Gate Voltage (VPASS) Interference in Sub-30nm Charge-Trapping (CT) NAND Flash Devices

【24h】

Study of Pass-Gate Voltage (VPASS) Interference in Sub-30nm Charge-Trapping (CT) NAND Flash Devices

机译：30nm以下电荷陷阱（CT）NAND闪存器件中的通门电压（VPASS）干扰的研究

获取原文

页面导航

著录项
相似文献
相关主题

著录项

来源
《2011 3rd IEEE International Memory Workshop 》|2011年|p.1-4|共4页
会议地点
作者
Hsiao Yi-Hsuan; Lue Hang-Ting; Chang Kuo-Pin; Hsieh Chih-Chang; Hsu Tzu-Hsuan; Hsieh Kuang-Yeu; Lu Chih-Yuan;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类存贮器 ;
关键词

相似文献

外文文献
中文文献
专利

1. Impact of src="/images/tex/28207.gif" alt="{hbox {V}}_{rm pass} "> Interference on Charge-Trapping NAND Flash Memory Devices [J] . Hsiao Yi-Hsuan, Lue Hang-Ting, Chen Wei-Chen, Device and Materials Reliability, IEEE Transactions on . 2015 ,第2期

机译： src =“ / images / tex / 28207.gif” alt =“ {hbox {V}} _ {rm pass}”> 对电荷陷阱NAND闪存的干扰存储设备
2. A Compact Model for Channel Coupling in Sub-30nm NAND Flash Memory Device [J] . Myounggon Kang, Wookghee Hahn, Ⅱ Han Park, Japanese journal of applied physics . 2011 ,第10Issue1期

机译：30纳米以下NAND闪存器件中通道耦合的紧凑模型
3. Physical Model of Field Enhancement and Edge Effects of FinFET Charge-Trapping NAND Flash Devices [J] . Hsu T.-H., Lue H.-T., King Y.-C., Electron Devices, IEEE Transactions on . 2009 ,第6期

机译：FinFET电荷陷阱NAND闪存器件的场增强和边缘效应的物理模型
4. Study of Pass-Gate Voltage (VPASS) Interference in Sub-30nm Charge-Trapping (CT) NAND Flash Devices [C] . Hsiao Yi-Hsuan, Lue Hang-Ting, Chang Kuo-Pin, IEEE International Memory Workshop . 2011

机译：子30nm电荷捕获（CT）NAND闪存器件中的通栅电压（VPASS）干扰研究
5. Characterization of Charge-trapping in GaN-based Devices [D] . Gao, Jianyi. 2018

机译：基于GaN的设备中电荷诱捕的特征
6. Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer [O] . Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, -1

机译：通过晶体ZrTiO4电荷陷阱层实现低压操作的闪存
7. Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance [O] . Lai PT, Tao QB 2013

机译：mo掺杂La2O3作为电荷俘获层，用于改善低压闪存性能
8. In the Matter of: Certain Probe Card Assemblies, Components Thereof and Certain Tested DRAM and NAND Flash Memory Devices and Products Containing Same. Investigation No. 337-TA-621 [R] . 2010

机译：在以下问题中：某些探针卡组件，其组件以及某些经过测试的DRam和NaND闪存设备以及包含它们的产品。第337-Ta-621号调查

Study of Pass-Gate Voltage (VPASS) Interference in Sub-30nm Charge-Trapping (CT) NAND Flash Devices

著录项

相似文献

相关主题

期刊订阅