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Evolution, challenge, and outlook of TSV, 3D IC integration and 3d silicon integration

机译:TSV,3D IC集成和3d硅集成的发展,挑战和前景

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3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations and is the focus of this investigation. The origin of 3D integration is presented. Also, the evolution, challenges, and outlook of 3D IC/Si integrations are discussed as well as their road maps are presented. Finally, a few generic, low-cost, and thermal-enhanced 3D IC integration system-in-packages (SiPs) with various passive TSV interposers are proposed.
机译:3D集成包括3D IC封装,3D IC集成和3D Si集成。它们是不同的,并且通常TSV(硅通孔)将3D IC封装与3D IC / Si集成分开,因为后两者使用TSV,而3D IC封装则不使用。 TSV(具有一个新概念,即每个芯片或中介层都可以具有两个带有电路的表面)是3D IC / Si集成的核心,也是本研究的重点。介绍了3D集成的起源。此外,还讨论了3D IC / Si集成的发展,挑战和前景,并提出了其发展路线图。最后,提出了几种带有各种无源TSV中介层的通用,低成本,热增强型3D IC集成系统级封装(SiP)。

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