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Quality factor for RF-MEMS capacitive switch on semi-suspended CPW

机译:半悬挂式CPW上的RF-MEMS电容式开关的品质因数

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This paper presents a new electrical model for RF-MEMS capacitive switch which is implemented on semi-suspended coplanar-waveguide. The model has been extracted from two previous works and it was able to describe the switch and take the effect of substrate into consideration with acceptable approximation. Regarding to the two similar structures of capacitive switches, a new formula for quality factor has been derived and the parameters which involve the quality factor have been studied with assumption of previous works. Moreover, the parameters which contribute to determining peak value of operating switch have been observed. According to the results, the fluctuation of the quality factor over frequency was very distinctive between 1–20 GHz and beyond that range, the variation of the quality factor was not very obvious. The results also indicate that increasing the series resistance which consists of resistance of T-line and bridge affected the quality factor. The increasing the series resistance reduced the quality factor and this effect was very noticeable at lower frequencies than 10 GHz. Increasing the capacitance of down-state also decreased the quality factor so that at lower than 3 GHz, it had considerable effect but higher than 5 GHz the effect was not very noticeable. On the other hand, increasing the resistance of substrate improved the quality factor but the effect is not very obvious for frequencies higher than 10 GHz. In addition, Peak value of operating as an important parameter, has been studied and the result suggested that the series resistance had almost no effect on determining the peak value of operating for the switch. The substrate resistance has the same influence. On the other hand, the capacitance of down-state has great effect on determining the peak value. It can change the bandwidth in which the switch can operate with higher quality factor. The capacitance of down-state did not have any effect on the value of quality factor.
机译:本文提出了一种在半悬浮共面波导上实现的RF-MEMS电容开关的新电气模型。该模型是从先前的两项工作中提取的,并且能够描述开关并以可接受的近似值考虑了基材的影响。针对电容开关的两个相似结构,推导了新的品质因数公式,并在先前工作假设的前提下研究了涉及品质因数的参数。此外,已经观察到有助于确定操作开关的峰值的参数。根据结果​​,品质因数随频率的波动在1–20 GHz及更高​​范围内非常明显,品质因数的变化不是很明显。结果还表明,增加由T线和电桥的电阻组成的串联电阻会影响品质因数。串联电阻的增加降低了品质因数,这种影响在低于10 GHz的频率下非常明显。下降态电容的增加也降低了品质因数,因此在低于3 GHz时,效果显着,但在高于5 GHz时,效果并不十分明显。另一方面,增加基板的电阻可以改善品质因数,但是对于高于10 GHz的频率,效果并不十分明显。另外,研究了工作峰值作为重要参数,结果表明,串联电阻对确定开关的工作峰值几乎没有影响。基板电阻具有相同的影响。另一方面,下降态的电容对确定峰值有很大的影响。它可以改变带宽,使交换机可以以更高的品质因数工作。下降态的电容对品质因数的值没有任何影响。

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