Realization of 100 V ultra-thin single-crystal silicon LDMOS

摘要

Video streaming and fast processing in System-in-Foil (SiF) applications require high performance and ultra-thin (< 20 µm), high-voltage transistors on foil. Chipfilm™ technology offers an efficient way of precisely defining the thickness of ultra-thin chips. An ultra-thin (< 20 µm) single-crystal silicon N-LDMOS transistor is realized for Chipfilm™ technology. The device has a breakdown voltage (Vbr) of more than 100 volts. With an Ion/Ioff ratio of >106, the drain current (Id) is ∼ 4 mA for channel width (W) = 50 µm and channel length (L) = 10 µm. The process flow is fully compatible with conventional high-voltage CMOS process.