Radiation Characterization of Commercial GaN Devices

摘要

Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. In this initial study of the radiation tolerance of commercial GaN devices, several device types from several suppliers were chosen. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 55 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 55 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in any of the tests performed in this study.