A novel N-MOSFET with air gaps in gate insulator for deep submicron applications

摘要

In this paper, a novel MOSFET with two air gaps in gate insulator (AG-MOSFET) is introduced, and it's AC characteristics, channel electric field, and mobility are analyzed by 2D numerical simulation. The simulated results show higher electron mobility and lower channel electric field under the air gap parts. 26% decrease in gate-drain (Cgd) and gate-substrate (Cgs) capacitances of AG-MOSFET structure is achieved in comparison with conventional MOSFET (C-MOSFET) structure. Also lower gate capacitance (Cg) and higher cut-off frequency is achieved for the AG-MOSFET structure. Cut-off frequency of the AG-MOSFET structure is 0.758 GHz, while it is 0.316 GHz in the C-MOSFET structure at 0 dB.