A Silicon on Nothing LDMOS with Two Air Pillars in Gate Insulator for Power Applications

摘要

This paper proposes a new silicon on nothing lateral double-diffused metal-oxide-semiconductor with two air gaps in the gate insulator (SON-APG LDMOS). Utilizing air for the buried layer and placing two air pillars in gate oxide has improved DC and AC characteristics of the transistor. 2-D simulation results of ATLAS simulator illustrate a 50% enhancement in the breakdown voltage compared to a conventional SOI-LDMOS (C-LDMOS). Besides, the on-state resistance reduces 60% as a result of drain current augmentation in the SON-APG LDMOS. Moreover, the RF feature of the SON-APG LDMOS improves due to the enhancement in the gate capacitances of the transistor. Therefore, the cut-off (f(T)), as well as maximum oscillation frequency (f(Max)), grows. The extra noise that the device adds to the signal reaching the load (Noise Figure) has improved in the proposed structure.