An atomic level study of multiple co-implantation technology for 32nm and beyond pMOSFETs ultra-shallow junction

摘要

Carbon, Fluorine, and Nitrogen are the co-implant species known for performing PMOS ultra-shallow junction. For the first time, it is demonstrated that the combination of the above three co-implant species could be most effective in suppressing boron diffusion for the continuous device performance improvement of sub-32nm technology. Vth roll-off characteristics were dramatically improved and a DIBL improvement of 30mV/V was demonstrated by applying this multiple co-implantation technology. Distinctive effect of each co-implant species for PMOS ultra-shallow junction formation was found and clarified for the first time based on SIMS analysis and kinetic Monte Carlo simulation.