Rapid and automated grain orientation and grain boundary analysis in nanoscale copper interconnects

摘要

A combination of diffraction scanning transmission electron microscopy (D-STEM) and automated precession microscopy is used to obtain orientation information from 108 copper grains in 120 nm wide copper interconnect lines. Grain boundary analysis based on this orientation data reveals that Σ3ⁿ (n = 1, 2) boundaries are predominant in these lines. Finite element analysis reveals regions of high and low stresses within the copper microstructure.