Benchmarking of Thermal Boundary Resistance of GaN-SiC Interfaces for AlGaN/GaN HEMTs: US, European and Japanese Suppliers

摘要

Benchmarking of thermal boundary resistance (TBR) of GaN-SiC interfaces for AlGaN/GaN HEMTs on SiC substrates is reported. Thermal resistance at this interface results in an additional sizable device temperature rise, and therefore reduced device reliability, beyond what is expected just from the thermal conductivities of the device materials. We demonstrate here that there is a large difference in GaN-SiC TBR, up to a factor of two, between different suppliers. Device structures from leading US, European, and Japanese suppliers were assessed, from commercial suppliers, universities and research institutes.