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Effects of Growth and Surface Cleaning Conditions on Strain Relaxation on SiGe Films beyond a Critical Thickness on Si(001) Substrate

机译:生长和表面清洁条件对Si(001)衬底上超过临界厚度的SiGe薄膜的应变弛豫的影响

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摘要

We describe our work investigating strain relaxation behavior ofepitaxial Si_(1-x)Ge_x films on silicon (001) substrates beyond thecritical thickness by using High Resolution X-Ray Diffraction(HRXRD). The effects of thickness, growth rate, dopantconcentration and surface cleaning on strain relaxation on the SiGefilms were investigated.
机译:我们描述我们的工作,研究应变松弛行为 硅(001)衬底上外延Si_(1-x)Ge_x膜 高分辨率X射线衍射产生的临界厚度 (HRXRD)。厚度,生长速率,掺杂剂的影响 浓度和表面清洁可消除SiGe上的应变 电影进行了调查。

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