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Modeling study of capacitance characteristics in strained High-K Metal gate technology: impact of Si/SiO_2/HK interfacial layer and band structure model

机译:高应变金属栅技术中电容特性的建模研究:Si / SiO_2 / HK界面层和能带结构模型的影响

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摘要

The importance of developing predictive modeling tools has considerably increased with the diffusion of nanoscale technologies, in which strained layers and he-terojunctions determine the materials modeling complexity. A self-consistent Poisson-Schroedinger solver based on a full-band (FB) k.p method has been developed and validated on large test structures, studying the oxide capacitance for various gate stacks. Among the effects governing the electrostatics of the devices, the impact of band structure models of the oxide, of the semiconductor, and the effects of the Si/SiO_2 interfacial layers have been studied. The predictions of FB k.p models are compared a tight binding model and to simpler effective mass approximation (EMA) models. The oxides have been treated as pseudo zinc-blend materials, adjusting the model parameters using ab-initio simulations. The importance of having such accurately calibrated models relies in the reduced computational time of EMA models with respect to FB models. Additionally 2D TCAD simulations have been performed using a commercial simulation package to assess the predictions of these simpler models.
机译:随着纳米级技术的普及,开发预测性建模工具的重要性已大大提高,其中应变层和异质结决定了材料建模的复杂性。已经开发了一种基于全频带(FB)k.p方法的自洽Poisson-Schroedinger求解器,并已在大型测试结构上进行了验证,从而研究了各种栅堆叠的氧化物电容。在控制器件静电的影响中,研究了氧化物,半导体的能带结构模型的影响以及Si / SiO_2界面层的影响。将FB k.p模型的预测与紧密结合模型和更简单的有效质量近似(EMA)模型进行了比较。氧化物已被当作伪锌混合材料,使用从头算模拟来调整模型参数。具有如此精确校准的模型的重要性在于,相对于FB模型,减少了EMA模型的计算时间。另外,已经使用商业仿真程序包进行了2D TCAD仿真,以评估这些较简单模型的预测。

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