Analytical model of quantum threshold voltage in short-channel nanowire MOSFET including band structure effects

摘要

An analytical model for the threshold voltage in Gate-All-Around (GAA) Nanowire MOSFET is derived in this paper. Nanowire architecture is aimed to strongly scaled devices, leading to the emergence of phenomena such as quantum confinement, short channel or band structure effects. All these phenomena have an impact on transistors performances and have to be included in the model. The mathematical expressions are detailed and validate on numerical simulations. Then, the impact on the electrostatics control of each phenomenon is discussed.