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Nanoscale graphene and carbon nanotube lithography using an atomic force microscope

机译:使用原子力显微镜的纳米级石墨烯和碳纳米管光刻

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In this work, we demonstrate the use of a voltage-applied Atomic Force Microscopy (VAFM) local anodic oxidation nanolithography process to precisely fabricate small (<20 nm) structures from graphene and carbon nanotube material. These graphitic materials have exceptional electrical properties which give them a niche in emerging nanoelectronics applications requiring quantum structures. While several methods for nanoscale patterning of these materials exist, the VAFM nanolithography technique has lately been shown to address the fabrication issues of graphitic nanodevices on the order of tens of nanometers [1]. If the tip is raised sufficiently from the substrate, in high atmospheric humidity, a water meniscus forms between the two (Fig 1). Application of an appropriate electric field between the tip and substrate dissociates the H2O molecules into H+ and OH-. The H+ ions rush towards the negatively charged tip and the OH- ions gather near the positively substrate. The oxygen reacts with the carbon in the graphitic material to form volatile or nonvolatile carbon oxides depending on the voltage applied. This oxidation, coupled with the x-y scanning capability of the AFM allows for thin structure patterning ability. Depending on such process parameters as applied voltage, pulse width, tip dimensions, contact force, and humidity, the oxidation of the graphitic material into carbon oxides enables the formation of insulating trenches or bumps to make any structure or morphology conceivable [2]. This technique can also be performed in the ambient environment, eliminating several fabrication steps, such as the poly(methyl methacrylate) (PMMA)processing required in conventional electron-beam lithography process.
机译:在这项工作中,我们演示了使用电压施加的原子力显微镜(VAFM)局部阳极氧化纳米光刻工艺从石墨烯和碳纳米管材料精确制造出小的(<20 nm)结构。这些石墨材料具有出色的电性能,在要求量子结构的新兴纳米电子应用中占有一席之地。尽管存在用于这些材料的纳米级图案化的几种方法,但近来已证明VAFM纳米光刻技术可解决数十纳米级别的石墨纳米器件的制造问题[1]。如果将尖端从基材上充分抬起,则在高大气湿度下,两者之间会形成水弯月面(图1)。在尖端和基底之间施加适当的电场会使H2O分子分解为H +和OH-。 H +离子冲向带负电的尖端,而OH-离子聚集在带正电的底物附近。氧与石墨材料中的碳反应生成挥发性或非挥发性的碳氧​​化物,具体取决于施加的电压。这种氧化,再加上原子力显微镜的x-y扫描能力,可以实现薄结构构图的能力。根据所施加的电压,脉冲宽度,尖端尺寸,接触力和湿度等工艺参数,石墨材料被氧化为碳氧化物后,就可以形成绝缘沟槽或凸块,从而可以构想出任何结构或形态[2]。该技术也可以在周围环境中执行,省去了几个制造步骤,例如聚甲基丙烯酸甲酯(PMMA) 传统电子束光刻工艺所需的加工工艺。

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