Correlation between Schottky contact characteristics and regions with a low barrier height revealed by the electrochemical deposition on 4H-SiC

摘要

We performed electrochemical deposition of ZnO on the surfaces of 4H-SiC epilayers and characterized Ni Schottky diodes fabricated on the same epilayers. We found correlation between positions where ZnO was deposited and positions where Schottky barrier height of Ni contacts is lower than of the rest of the contacts. Parts of the surface where ZnO was deposited were observed by AFM after removal of the ZnO layer, and we discussed the origin of the low Schottky barrier height from the AFM images.