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Finfet Standard Cells Delay Model for Fast Timing Analysis

机译:FinFET标准单元快速定时分析的延迟模型

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The fast growth of the real projects on FinFET technology has led to the need of design flow changes at all levels of abstraction. Especially interesting for designers is the possibility of early exploration of the FinFET standard cells timings. In this case, it is necessary to take into account the quantification of FinFET channel width, determined by an integer number of fins. The paper presents a model for standard cell delay calculation, which can be used for quick analysis of design options. The linear model allows to calculate the critical path in the circuit without full circuit simulation, using only a small number of empirical parameters. An example of development such model for 20 nm technology is given in the paper.
机译:FinFET技术的实际项目的快速增长导致了各级抽象级别的设计流动变化。对于设计人员来说特别有趣是早期探索FinFET标准细胞定时的可能性。在这种情况下,需要考虑FinFET信道宽度的量化,由整数的翅片确定。本文介绍了标准单元延迟计算的模型,可用于快速分析设计选项。线性模型允许仅使用少量经验参数计算电路中的临界路径而无需全电路仿真。纸质中给出了20 nm技术的发展这种模型的示例。

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