Pure Co films of low resistivity and high conformality by low temperature thermal CVD/ALD using novel Co precursors

摘要

A new family of highly volatile alkylsilyl-functionality Co precursors, R_3SiCo(CO)_4, has been synthesized. One of them, Et_3SiCo(CO)_4, has been evaluated by low temperature thermal chemical vapor deposition (CVD) and atomic layer deposition (ALD), which gave low resistive (29 μΩ·cm) pure Co films with a good step overage. Dynamic stability test of Et3SiCo(CO)_4 also exhibited abetter stability at 40 °C and 50 °C, compared to CCTBA, a conventional Co precursor.