The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.
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