Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

摘要

We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1 × 10^-5 ¿ cm². The resistivity of the ZnO nanowires is measured to be 2.2 × 10^-2 ¿ cm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ¿10⁸ have been fabricated and characterized.