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A Simulation Studies of Piezoresistive Sensing Resistor in MEMS Square Diaphragm

机译:MEMS方形膜片中压阻传感电阻的仿真研究

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A piezoresistive sensing resistor in MEMS square diaphragm has been studied using the MEMCAD 4.0 suite of tools, and in particular the piezoresistive module. It is seen that the effect of resistor size and position significantly effects the performance and behavior of the sensor. A 0.55 MPa pressure is used for the simulation on a 500um to 200um wide square shape diaphragm with 50um in thickness. Each resistor is built in arranged into a full Wheatstone Bridge configuration. To determine the optimal resistor, effective resistor length on sensor output is simulated. The best resistor length is about 20% of the diaphragm length, by increasing or decreasing the resistor length from the effective resistor length, it will greatly reduce the voltage output and the sensitivity of the sensor. The temperature effect on piezoresistive were also evaluated over a temperatures range of -19°C to 85°C. The normalized resistance change with the temperature was linear but the voltage output and the sensitivity decrease with increasing temperature.
机译:已经使用MEMCAD 4.0工具套件,特别是压阻模块,研究了MEMS方膜片中的压阻传感电阻器。可以看出,电阻大小和位置的影响会显着影响传感器的性能和行为。在500um至200um宽,厚度为50um的方形隔膜上使用0.55 MPa的压力进行模拟。每个电阻都内置在完整的惠斯通电桥配置中。为了确定最佳电阻,模拟传感器输出上的有效电阻长度。最佳电阻器长度约为膜片长度的20%,通过从有效电阻器长度增加或减小电阻器长度,将大大降低电压输出和传感器的灵敏度。在-19°C至85°C的温度范围内,还评估了对压阻的温度影响。归一化电阻随温度的变化是线性的,但电压​​输出和灵敏度随温度的升高而降低。

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