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Analysis on edge effect of MEMS capacitance diaphragm gauge with square pressure-sensing diaphragm

机译:MEMS电容隔膜计与方形压力传感隔膜的边缘效应分析

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摘要

For high-accuracy MEMS capacitance sensors, the edge effect of capacitance cannot be ignored. This paper introduces a MEMS capacitance diaphragm gauge with a square pressure-sensing diaphragm for 1-1000 Pa measurement. The edge effect is analyzed using integrated method and conformal transformation theory. FEM software is used to calculate the capacitance and sensitivity of the MEMS capacitance diaphragm gauge. The results show that the edge effect is weakened with the increase of 2a/d (the ratio of the length 2a of the diaphragm and the depth d of vacuum gap). And the thickness t of the diaphragm also has a positive contribution to the edge effect. With optimization of the diaphragm and vacuum gap design, the capacitance error caused by the edge effect is 2.2%, meanwhile, high sensitivity and good linearity can be kept.
机译:对于高精度MEMS电容传感器,不能忽略电容的边缘效果。 本文介绍了一个MEMS电容隔膜表,带有方形压力传感隔膜,可为1-1000Pa测量。 使用集成方法和保形转化理论分析边缘效应。 有限元软件用于计算MEMS电容膜片表的电容和灵敏度。 结果表明,随着2A / D的增加(隔膜的长度2a的比率和真空间隙的深度D的比率)的增加,边缘效应被削弱。 膜片的厚度T也对边缘效应具有正贡献。 随着隔膜和真空隙设计的优化,由边缘效应引起的电容误差为2.2%,同时,可以保持高灵敏度和良好的线性。

著录项

  • 来源
    《Microsystem technologies》 |2019年第7期|共8页
  • 作者单位

    Lanzhou Inst Phys Sci &

    Technol Vacuum Technol &

    Phys Lab Lanzhou 730000 Gansu Peoples R China;

    Lanzhou Inst Phys Sci &

    Technol Vacuum Technol &

    Phys Lab Lanzhou 730000 Gansu Peoples R China;

    Lanzhou Inst Phys Sci &

    Technol Vacuum Technol &

    Phys Lab Lanzhou 730000 Gansu Peoples R China;

    Lanzhou Inst Phys Sci &

    Technol Vacuum Technol &

    Phys Lab Lanzhou 730000 Gansu Peoples R China;

    Lanzhou Inst Phys Sci &

    Technol Vacuum Technol &

    Phys Lab Lanzhou 730000 Gansu Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路(IC);
  • 关键词

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