Multi-scale simulation of partially unzipped CNT hetero-junction Tunneling Field Effect Transistor

摘要

Band-to-band Tunneling Field Effect Transistors (TFETs) are emerging as a solution to break classical 60mV/dec sub-threshold slope limit of conventional MOSFETs. In this work, we present for the first time multi-scale simulation results of partially unzipped Carbon Nanotube heterojunction TFET. Compared to the CNT and GNR homojunction TFETs, GNR/CNT heterojunction TFETs demonstrate superior sub-threshold region characteristics - 104x smaller Ioff, 61% smaller Subthreshold Swing (SS) which lies in the range of 22∼26mV/dec and the I–V ambipolarity is completely eliminated.