We have developed millisecond annealing technique using an atmospheric pressure DC arc discharge thermal plasma jet (TPJ). Noncontact monitoring of wafer surface temperature is performed on the basis of transient reflectivity of silicon wafer observed during TPJ irradiation. As and B implanted silicon wafers were annealed and the impurity activation was investigated. In the case of As+-implanted samples, efficient dopant activation was observed at a temperature higher than 1000 K, while it was observed at a temperature higher than 1400 K in the case of B-implanted samples. The sheet resistance (RS) of B-implanted samples monotonically decreases with temperature, and no significant dependence on heating rate (Rh) or cooling rate (Rc) is observed. On the other hand, As+-implanted samples show significant dependence of RS on Rh and Rc. We have performed TPJ annealing on an As2+-implanted sample, and obtained an ultrashallow junction (USJ) with a junction depth (Xj) of 11.9 nm and a RS of 1095 Ω/sq. B USJ is also obtained with a Xj of 23.5 nm and a RS of 392 Ω/sq. Precise control of Rh and Rc in addition to annealing temperature is quite important for achieving highly efficient doping in USJ.
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机译：我们开发了一种使用大气压直流电弧放电热等离子体射流（TPJ）的毫秒退火技术。晶片表面温度的非接触式监测是基于在TPJ照射过程中观察到的硅晶片的瞬态反射率进行的。对注入的砷和硼硅晶片进行退火，并研究杂质的活化。在注入了As + 的样品中，在高于1000 K的温度下观察到有效的掺杂剂活化，而在注入B的样品中，在高于1400 K的温度下观察到了有效的掺杂剂活化。 B注入样品的薄层电阻（R S ）随温度单调降低，并且与加热速率（R h ）或冷却速率（R c ）。另一方面，植入了As + 的样品显示R S 对R h 和R c 的依赖性很大。我们对植入了As 2 + 的样品进行了TPJ退火，并获得了结深度为（X j 的超浅结（USJ）。 ）为11.9 nm，R S 为1095Ω/ sq。还获得了B USJ，其X j 为23.5 nm，R S 为392Ω/ sq。除退火温度外，精确控制R h 和R c 对于在USJ中实现高效掺杂非常重要。
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