首页> 外文会议>Conference on alternative lithographic technologies >Stability and imaging of the ASML EUV Alpha Demo Tool
【24h】

Stability and imaging of the ASML EUV Alpha Demo Tool

机译:ASML EUV Alpha演示工具的稳定性和成像

获取原文

摘要

Extreme Ultra-Violet (EUV) lithography is the leading candidate for semiconductor manufacturing of the 22nm technology node and beyond, due to the very short wavelength of 13.5nm. However, reducing the wavelength adds complexity to the lithographic process. The impact of the EUV specific conditions on lithographic performance needs to be understood, before bringing EUV lithography into pre-production. To provide early learning on EUV, an EUV full-field scanner, the Alpha Demo Tool (ADT) from ASML was installed at IMEC, using a Numerical Aperture (NA) of 0.25. In this paper we report on different aspects of the ADT: the imaging and overlay performance and both short and long-term stability. For 40nm dense Lines-Spaces (LS), the ADT shows an across field overlapping process window of 270nm Depth Of Focus (DOF) at 10% Exposure Latitude (EL) and a wafer CD Uniformity (CDU) of 3nm 3σ, without any corrections for process or reticle. The wafer CDU is correlated to different factors that are known to influence the CD fingerprint from traditional lithography: slit intensity uniformity, focus plane deviation and reticle CD error. Taking these contributions into account, the CD through slit fingerprint for 40nm LS is simulated with excellent agreement to experimental data. The ADT shows good CD stability over 9 months of operation, both intrafield and across wafer. The projection optics reflectivity has not degraded over 9 months. Measured overlay performance with respect to a dry tool shows |Mean|+3σ below 20nm with more correction potential by applying field-by-field corrections (|Mean|+3σ ≤10nm). For 22nm SRAM application, both contact hole and metal layer were printed in EUV with 10% CD and 15nm overlay control. Below 40nm, the ADT shows good wafer CDU for 30nm dense and isolated lines (on the same wafer) and 38nm dense Contact Holes (CH). First 28nm dense line CDU data are achieved. The results indicate that the ADT can be used effectively for EUV process development before installation of the pre-production tool, the ASML NXE Gen. 1 at IMEC.
机译:由于极短的13.5nm波长,极紫外(EUV)光刻技术是22nm及更高工艺节点的半导体制造的主要候选材料。但是,减小波长会增加光刻工艺的复杂性。在将EUV光刻进行预生产之前,需要了解EUV特定条件对光刻性能的影响。为了提供有关EUV的早期学习,EUV全视场扫描仪在IMEC上安装了ASML的Alpha演示工具(ADT),其数值孔径(NA)为0.25。在本文中,我们报告了ADT的不同方面:成像和覆盖性能以及短期和长期稳定性。对于40nm密集的行间距(LS),ADT在10%的曝光范围(EL)和3nm3σ的晶圆CD均匀度(CDU)下显示了270nm景深(DOF)的跨场重叠工艺窗口,未经任何校正用于过程或标线。晶圆CDU与已知会影响传统光刻法的CD指纹的不同因素相关:缝隙强度均匀性,焦平面偏差和标线片CD误差。考虑到这些贡献,模拟了通过缝隙指纹的40nm LS的CD,与实验数据非常吻合。 ADT在场内和整个晶圆上运行9个月都显示出良好的CD稳定性。投影光学器件的反射率在9个月内没有降低。通过应用逐场校正(| Mean | +3σ≤10nm),相对于干燥工具测得的覆盖性能显示| Mean | +3σ低于20nm,具有更大的校正潜力。对于22nm SRAM应用,接触孔和金属层均以具有10%CD和15nm覆盖控制的EUV印刷。在40nm以下,ADT对30nm密集和隔离线(在同一晶片上)和38nm密集接触孔(CH)显示出良好的晶片CDU。首先获得了28nm密集线CDU数据。结果表明,在安装IMEC的预生产工具ASML NXE Gen.1之前,ADT可以有效地用于EUV流程开发。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号