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Self-heat reliability considerations on Intel's 22nm Tri-Gate technology

机译：英特尔22nm三门技术的自热可靠性考虑因素

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This paper describes various measurements on self-heat performed on Intel's 22nm process technology, and outlines its reliability implications. Comparisons to thermal modeling results and analytical data show excellent matching.

机译：本文介绍了对英特尔22nm工艺技术执行的自热的各种测量，并概述了其可靠性影响。热建模结果与分析数据的比较显示出优异的匹配。

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《IEEE International Reliability Physics Symposium 》|2013年||共5页
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Prasad C.; Jiang L.; Singh D.; Agostinelli M.;
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中图分类 O4-53;
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Self-heat reliability considerations on Intel's 22nm Tri-Gate technology

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