DEVICE DEGRADATION MODEL FOR STACKED-ONO GATE STRUCTURE WITH USING SONOS AND MOS TRANSISTORS

摘要

A model for the device degradation in SONOS transistors has been proposed with comparing the device characteristics under Fowler-Nordheim (F-N) stress between the stacked-ONO and single-oxide gate structures. It is demonstrated that the degradation rate for a SONOS transistor can be expressed with the hole fluence injected from anode.