Isotropic etching of SiC

摘要

Isotropic etching of silicon carbide was achieved using a capacitive coupled parallel plate reactor in plasma etching mode and SF_6 at elevated substrate temperatures. It was observed to be remarkable at substrate temperatures above 350°C. The influence of chamber pressure, masking materials, rf-power and substrate temperature were analyzed. Thereby, 8.5° off-axis oriented 4H-SiC wafers exhibit a larger vertical and lateral etching rate compared to on-axis oriented SiC wafers. Additionally, the erosion of nitrogen containing masking material results in a reduction of the etching rates.