(11-20) face channel MOSFET with low on-resistance

摘要

We have investigated the techniques to improve the channel mobility of SiC MOSFETs and found that the hydrogen termination of dangling bonds at a MOS interface is very effective in improving the channel mobility, particularly that of the interface fabricated on a (11-20) face wafer. A high channel mobility of MOSFET on the (11-20) face was achieved to 244cm~2/Vs by new process which can terminate dangling bonds by hydrogen. The vertical MOSFET, which is prepared using this process, has a low on-resistance of 5.7 mΩcm~2 and a breakdown voltage of 1100 V. The channel resistance is estimated at 0.58 mΩcm~2.