12V p-channel MOSFET boasts lowest on-resistance

摘要

Vishay Intertechnology Inc. debuts a new 12V p-chan-nel TrenchFET Gen III power MOSFET that claims the industry's lowest on-resistance for a p-chan-nel device. The device comes in a thermally enhanced PowerPAK SC-75, which features a footprint of 1.6mm by 1.6mm. The newrnSiB455EDK is the latest product built on TrenchFET Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This technology allows a superfine, subum pitch process that cuts the best on-resistance for a p-channel MOSFET in half.