1270V, 1.21mΩ·cm~2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

摘要

We have succeeded to fabricate SiC buried gate static induction transistors (BGSITs) with the breakdown voltage V_(BR) of 1270 V at the gate voltage V_(GS) of-12 V and the specific on-resistance R_(onS) of 1.21 mΩ·cm~2 at V_(GS) = 2.5 V. The turn-off behaviors of BGSITs strongly depend on the source length W_S, which is the distance between the gate electrodes. The rise time t_r of BGSIT for _S = 1,070 μm is 395 nsec, while that for W_S = 210 μm is 70nsec. From the 3D computer simulations, we confirmed that the difference in turn-off behavior came from the time delay in potential barrier formation in channel region because of high p~+ gate resistivity. The turn-off behaviors also depend on the operation temperature, especially for long W_S. On the other hand, the turn-on behaviors hardly depend on the W_S and temperature.